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- W2095473604 abstract "Low temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600–900 °C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In-doped LT-Al0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two-dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications." @default.
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- W2095473604 date "1994-05-09" @default.
- W2095473604 modified "2023-09-24" @default.
- W2095473604 title "Two‐dimensional arsenic precipitation by In delta doping during low temperature molecular beam epitaxy growth of GaAs or AlGaAs" @default.
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- W2095473604 doi "https://doi.org/10.1063/1.111559" @default.
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