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- W2095483260 abstract "A low-temperature fabrication process of high-performance polycrystalline silicon thin-film transistors (poly-Si TFTs) is discussed. The performance of TFT is found to depend strongly on crystallization, plasma hydrogenation of poly-Si, and the fabrication process of the SiO2 insulator. Especially, a key issue in a low-temperature processing is how to fabricate a gate insulator without serious damage. A method of remote plasma chemical vapor deposition is shown to be very useful for fabrication of high-quality SiO2/Si interface of a large area at low temperatures." @default.
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- W2095483260 title "Fabrication of poly-si tfts using laser annealing technique" @default.
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- W2095483260 doi "https://doi.org/10.1002/ecjb.4420761010" @default.
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