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- W2095524781 abstract "The tunneling mechanism of electrons and holes to surface states from near‐surface Al0.3Ga0.7As/GaAs quantum wells has been investigated by steady‐state and time‐resolved photoluminescence spectroscopy, near liquid‐helium temperature, of the excitonic e1‐hh1 transition in the well. The ensemble of the data, taken over a wide range of optical excitation levels, for various values of the tunneling‐barrier thickness, and before and after passivation of the surface by hydrogen, allows a description both of the details of the tunneling mechanism and of the character and behavior of relevant surface states. The main results are summarized as follows: (i) steady‐state tunneling is ambipolar, namely, separate for electrons and holes, rather than excitonic; (ii) Spicer’s advanced unified defect model for an oxidized GaAs surface, antisite‐As donors as dominating surface traps, provides an appropriate description of the state distribution at the interface between AlGaAs and its oxide; (iii) hole accumulation in surface states, resulting from the nominally different unipolar tunneling probability for the two carriers (and increasing with excitation level), generates a dipole electric field across the tunneling barrier, extending into the well; (iv) hydrogenation efficiently passivates electron trapping in surface states, but not hole tunneling and the consequent generation of a surface field by illumination; (v) the experimental findings agree with a model for ambipolar tunneling based on a self‐consistent quantum‐mechanical approach." @default.
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- W2095524781 date "1994-05-15" @default.
- W2095524781 modified "2023-09-23" @default.
- W2095524781 title "Interaction mechanisms of near‐surface quantum wells with oxidized and H‐passivated AlGaAs surfaces" @default.
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- W2095524781 doi "https://doi.org/10.1063/1.355757" @default.
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