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- W2095577386 abstract "Thin films of phosphorus-doped boron nitride have been grown onto InP, as a new gate insulator, by low-temperature chemical vapor deposition using the reaction of NH3, B2H6, and PH3. Characteristics of the pyrolytic boron nitride obtained have been investigated by ellipsometry, x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and conductivity measurement. The results of XPS and AES have shown that a stable and comparatively stoichiometric boron nitride film was successfully obtained, even at low temperatures (300–600 °C), by using the two-temperature zone technique. The density of interface states for the BN/InP system has been found to be about 1010 cm−2 eV−1 or less around the midgap." @default.
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- W2095577386 date "1984-04-15" @default.
- W2095577386 modified "2023-09-25" @default.
- W2095577386 title "Study of boron nitride gate insulators onto InP grown by low-temperature chemical vapor deposition" @default.
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- W2095577386 doi "https://doi.org/10.1063/1.333306" @default.
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