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• W2095583552 startingPage "4661" @default.
• W2095583552 abstract "The crystallinities and electrical properties of homoepitaxial diamond films grown from carbon monoxide have been investigated. The films were grown on high-pressure synthesized diamond (100) and (111) substrates by microwave plasma chemical vapor deposition, and were characterized by means of atomic force microscopy, reflection high-energy electron diffraction, cathodoluminescence, secondary electron microscopy and Hall effect measurement. The (100) films were smooth, whereas films grown on the (111) substrate became rough. The boron-doped (100) film also exhibited Hall mobility of 451 cm 2 /Vs." @default.
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• W2095583552 date "1993-10-01" @default.
• W2095583552 modified "2023-10-08" @default.
• W2095583552 title "Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide" @default.
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• W2095583552 doi "https://doi.org/10.1143/jjap.32.4661" @default.
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