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• W2095587435 abstract "In this paper the remote surface roughness effects on channel electron density of nano MOSFET is discussed by solving the coupled Schrodinger equation and Poisson equation. The results demonstrate that the remote surface roughness could largely affect the density of inversion channel electron, and the change of electron density by this effect has been found to have approximately linear relationship to the remote surface roughness. This implies that the mobility degradation effect by remote surface roughness scattering can be partially erased for the on-state current." @default.
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• W2095587435 date "2009-10-02" @default.
• W2095587435 modified "2023-09-26" @default.
• W2095587435 title "Remote surface roughness effects on inversion electron density in nano-MOSFET" @default.
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• W2095587435 doi "https://doi.org/10.1051/epjap/2009156" @default.
• W2095587435 hasPublicationYear "2009" @default.
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