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• W2095859975 abstract "We report on reflection modulation results near 1.55 mum in InP-based two-dimensional photonic crystals. The fabrication technology uses a polymeric bonding technique to integrate the InP thin-slab onto a Silicon wafer. Reflectivity modulation greater than 90% is obtained by pumping at 810 nm with optical excitation densities of 15 muJ/cm(2). The resulting optical broadband modulation is based on the saturation of absorption of InGaAs quantum wells at a photonic mode frequency tunable by lithography." @default.
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• W2095859975 date "2007-01-01" @default.
• W2095859975 modified "2023-10-01" @default.
• W2095859975 title "High contrast reflection modulation near 1.55μm in InP 2D photonic crystals on silicon wafer" @default.
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• W2095859975 doi "https://doi.org/10.1364/oe.15.001254" @default.
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