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- W2095909851 abstract "We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single overgrowth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements. Single-lateral-mode emission is demonstrated initially from an In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.17</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.83</sub> As double quantum well laser emitting ~980 nm. We then apply the fabrication technique to a quantum dot laser emitting ~1300 nm. Furthermore, we analyze the breakdown mechanism in our devices and discuss the limitations of index guiding in our structures." @default.
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- W2095909851 date "2009-01-01" @default.
- W2095909851 modified "2023-09-25" @default.
- W2095909851 title "Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer" @default.
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- W2095909851 doi "https://doi.org/10.1109/jstqe.2008.2011654" @default.
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