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- W2096327672 abstract "This paper reports that the switching controllability of high-voltage GaN-HEMTs and the cascode connection depends on the feedback capacitance design. The switching behavior of the GaN-HEMT can be controlled by the external gate resistance as the same manner as the conventional Si-MOSFETs. The switching controllability was improved by the substrate connection due to the parasitic capacitance change. The controllability of the cascode connection was slightly worse compared with the Si-MOSFET, because the effective feedback capacitance became small by the step by step switching operation." @default.
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- W2096327672 date "2012-06-01" @default.
- W2096327672 modified "2023-10-16" @default.
- W2096327672 title "Switching controllability of high voltage GaN-HEMTs and the cascode connection" @default.
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- W2096327672 doi "https://doi.org/10.1109/ispsd.2012.6229065" @default.
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