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• W2096488047 abstract "We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to a dopant known to produce only deep levels at equilibrium concentrations. Temperature-dependent conductivity and Hall effect measurements for temperatures T > 1.7 K both indicate that a transition from insulating to metallic conduction occurs at a sulfur concentration between 1.8 and 4.3 x 10^20 cm-3. Conduction in insulating samples is consistent with variable range hopping with a Coulomb gap. The capacity for deep states to effect metallic conduction by delocalization is the only known route to bulk intermediate band photovoltaics in silicon." @default.
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• W2096488047 date "2011-04-25" @default.
• W2096488047 modified "2023-10-13" @default.
• W2096488047 title "Insulator-to-Metal Transition in Sulfur-Doped Silicon" @default.
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• W2096488047 doi "https://doi.org/10.1103/physrevlett.106.178701" @default.
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