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- W2096516063 abstract "We demonstrate for the first time 70nm gate length TiN/HfO <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> pMOSFETs on 200mm GeOI wafers, with excellent performances: I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</inf> =330μA/μm & I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</inf> =1μA/μm @ V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>d</inf> =-1.2V (without germanide). These performances are obtained using adapted counterdoping and pocket implants. We report the best CV/I vs. I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</inf> trade-off for Ge or GeOI: CV/I=4.4ps, I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</inf> =500nA/μm @ V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>d</inf> =-1V. Moreover, based on fine electrical characterizations (μ, D <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</inf> , R <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>access…</inf> ) at T=77-300K, in-depth analysis of both ON & OFF states were carried out. Besides, calibrated TCAD simulations were performed to predict the performance enhancements which can be theoretically reached after further device optimization. By using germanide and reducing both interface state density and diode leakage we expect I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</inf> =450μA/μm, I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</inf> =100nA/μm @ V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>d</inf> =−1V for L <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g</inf> =70nm." @default.
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- W2096516063 date "2008-01-01" @default.
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- W2096516063 title "High performance 70nm gate length Germanium-On-Insulator pMOSFET with high- /metal gate" @default.
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- W2096516063 doi "https://doi.org/10.1109/essderc.2008.4681702" @default.
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