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• W2096671275 abstract "Radiation tests of 32 μm thick hydrogenated amorphous silicon n–i–p diodes have been performed using a high-energy 24 GeV proton beam up to fluences of 2 × 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n–i–p diodes using a proton beam of 405 keV at a fluence of 3 × 1013 protons/cm2. All samples exhibited a drop of the photoconductivity and an increase in the dark leakage current under both high- and low-energy proton irradiation. An almost full recovery of the device performance was observed after a subsequent thermal annealing." @default.
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• W2096671275 date "2006-06-01" @default.
• W2096671275 modified "2023-10-06" @default.
• W2096671275 title "Radiation hardness of amorphous silicon particle sensors" @default.
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• W2096671275 doi "https://doi.org/10.1016/j.jnoncrysol.2005.10.035" @default.
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