FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2096751986> ?p ?o ?g. }

• W2096751986 endingPage "2282" @default.
• W2096751986 startingPage "2276" @default.
• W2096751986 abstract "A thermodynamic variational model derived by minimizing the Helmholtz free energy of the MOS device is presented. The model incorporates an anisotropic permittivity tensor and accommodates a correction for quantum-mechanical charge confinement at the dielectric/substrate interface. The energy associated with the fringe field that is adjacent to the oxide is of critical importance in the behavior of small devices. This feature is explicitly included in our model. The model is verified using empirical and technology-computer-aided-design-generated capacitance-voltage data obtained on MOS devices with ZrO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , and SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate insulators. The model includes considerations for an interfacial low-k interface layer between the silicon substrate and the high-k dielectric. This consideration enables the estimation of the equivalent oxide thickness. The significance of sidewall capacitance effects is apparent in our modeling of the threshold voltage (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> ) for MOS capacitors with effective channel length at 30 nm and below. In these devices, a variation in high-k permittivity produces large differences in V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> . This effect is also observed in the variance of V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> , due to dopant fluctuation under the gate." @default.
• W2096751986 created "2016-06-24" @default.
• W2096751986 creator A5000722652 @default.
• W2096751986 creator A5014978181 @default.
• W2096751986 creator A5026211145 @default.
• W2096751986 creator A5087833695 @default.
• W2096751986 date "2007-09-01" @default.
• W2096751986 modified "2023-09-23" @default.
• W2096751986 title "Empirically Verified Thermodynamic Model of Gate Capacitance and Threshold Voltage of Nanoelectronic MOS Devices With Applications to $hbox{HfO}_{2}$ and $hbox{ZrO}_{2}$ Gate Insulators" @default.
• W2096751986 cites W2015892961 @default.
• W2096751986 cites W2061844299 @default.
• W2096751986 cites W2064241102 @default.
• W2096751986 cites W2112554416 @default.
• W2096751986 cites W2115073796 @default.
• W2096751986 cites W2169623493 @default.
• W2096751986 cites W2171105988 @default.
• W2096751986 cites W1753644305 @default.
• W2096751986 doi "https://doi.org/10.1109/ted.2007.902903" @default.
• W2096751986 hasPublicationYear "2007" @default.
• W2096751986 type Work @default.
• W2096751986 sameAs 2096751986 @default.
• W2096751986 citedByCount "5" @default.
• W2096751986 countsByYear W20967519862012 @default.
• W2096751986 countsByYear W20967519862014 @default.
• W2096751986 countsByYear W20967519862018 @default.
• W2096751986 crossrefType "journal-article" @default.
• W2096751986 hasAuthorship W2096751986A5000722652 @default.
• W2096751986 hasAuthorship W2096751986A5014978181 @default.
• W2096751986 hasAuthorship W2096751986A5026211145 @default.
• W2096751986 hasAuthorship W2096751986A5087833695 @default.
• W2096751986 hasConcept C111368507 @default.
• W2096751986 hasConcept C119599485 @default.
• W2096751986 hasConcept C121332964 @default.
• W2096751986 hasConcept C127313418 @default.
• W2096751986 hasConcept C127413603 @default.
• W2096751986 hasConcept C133386390 @default.
• W2096751986 hasConcept C165801399 @default.
• W2096751986 hasConcept C166972891 @default.
• W2096751986 hasConcept C168651791 @default.
• W2096751986 hasConcept C172385210 @default.
• W2096751986 hasConcept C17525397 @default.
• W2096751986 hasConcept C184720557 @default.
• W2096751986 hasConcept C192562407 @default.
• W2096751986 hasConcept C24326235 @default.
• W2096751986 hasConcept C26873012 @default.
• W2096751986 hasConcept C2777289219 @default.
• W2096751986 hasConcept C30066665 @default.
• W2096751986 hasConcept C49040817 @default.
• W2096751986 hasConcept C52192207 @default.
• W2096751986 hasConcept C62520636 @default.
• W2096751986 hasConceptScore W2096751986C111368507 @default.
• W2096751986 hasConceptScore W2096751986C119599485 @default.
• W2096751986 hasConceptScore W2096751986C121332964 @default.
• W2096751986 hasConceptScore W2096751986C127313418 @default.
• W2096751986 hasConceptScore W2096751986C127413603 @default.
• W2096751986 hasConceptScore W2096751986C133386390 @default.
• W2096751986 hasConceptScore W2096751986C165801399 @default.
• W2096751986 hasConceptScore W2096751986C166972891 @default.
• W2096751986 hasConceptScore W2096751986C168651791 @default.
• W2096751986 hasConceptScore W2096751986C172385210 @default.
• W2096751986 hasConceptScore W2096751986C17525397 @default.
• W2096751986 hasConceptScore W2096751986C184720557 @default.
• W2096751986 hasConceptScore W2096751986C192562407 @default.
• W2096751986 hasConceptScore W2096751986C24326235 @default.
• W2096751986 hasConceptScore W2096751986C26873012 @default.
• W2096751986 hasConceptScore W2096751986C2777289219 @default.
• W2096751986 hasConceptScore W2096751986C30066665 @default.
• W2096751986 hasConceptScore W2096751986C49040817 @default.
• W2096751986 hasConceptScore W2096751986C52192207 @default.
• W2096751986 hasConceptScore W2096751986C62520636 @default.
• W2096751986 hasIssue "9" @default.
• W2096751986 hasLocation W20967519861 @default.
• W2096751986 hasOpenAccess W2096751986 @default.
• W2096751986 hasPrimaryLocation W20967519861 @default.
• W2096751986 hasRelatedWork W2032765013 @default.
• W2096751986 hasRelatedWork W2102125877 @default.
• W2096751986 hasRelatedWork W2111497495 @default.
• W2096751986 hasRelatedWork W2143128254 @default.
• W2096751986 hasRelatedWork W2162583999 @default.
• W2096751986 hasRelatedWork W2324197978 @default.
• W2096751986 hasRelatedWork W2522130757 @default.
• W2096751986 hasRelatedWork W2799179006 @default.
• W2096751986 hasRelatedWork W4231938670 @default.
• W2096751986 hasRelatedWork W4253731651 @default.
• W2096751986 hasVolume "54" @default.
• W2096751986 isParatext "false" @default.
• W2096751986 isRetracted "false" @default.
• W2096751986 magId "2096751986" @default.
• W2096751986 workType "article" @default.