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• W2096825488 abstract "The internal stress and strain in boron-doped diamond films grown by microwave plasma chemical vapor deposition (MWCVD) and hot filament CVD (HFCVD) were studied as a function of boron concentration. The total stress (thermal+intrinsic) was tensile, and the stress and strain increased with boron concentration. The stress and the strain measured in HFCVD samples were greater than those of MWCVD samples at the same boron concentration. The intrinsic tensile stress, 0.84 GPa, calculated by the grain boundary relaxation model, was in good agreement with the experimental value when the boron concentration in the films was below 0.3 at.%. At boron concentrations above 0.3 at.%, the tensile stress was mainly caused by high defect density, and induced by a node-blocked sliding effect at the grain boundary." @default.
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• W2096825488 date "1996-08-01" @default.
• W2096825488 modified "2023-10-18" @default.
• W2096825488 title "Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition" @default.
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• W2096825488 doi "https://doi.org/10.1063/1.362996" @default.
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