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• W2096982018 abstract "In this letter, flexible double-gate (DG) thin-film transistors (TFTs) based on InGaZnO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> and fabricated on free standing plastic foil, using self-alignment (SA) are presented. The usage of transparent indium-tin-oxide instead of opaque metals enables SA of source-, drain-, and top-gate contacts. Hence, all layers, which can cause parasitic capacitances, are structured by SA. Compared with bottom-gate reference TFTs fabricated on the same substrate, DG TFTs exhibit a by 68% increased transconductance and a subthreshold swing as low as 109 mV/dec decade (-37%). The clockwise hysteresis of the DG TFTs is as small as 5 mV. Because of SA, the source/drain to gate overlaps are as small as ≈ 1 μm leading to parasitic overlap capacitances of 5.5 fF μm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> . Therefore a transit frequency of 5.6 MHz is measured on 7.5 μm long transistors. In addition, the flexible devices stay fully operational when bent to a tensile radius of 6 mm." @default.
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• W2096982018 date "2014-01-01" @default.
• W2096982018 modified "2023-09-30" @default.
• W2096982018 title "Flexible Self-Aligned Double-Gate IGZO TFT" @default.
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• W2096982018 doi "https://doi.org/10.1109/led.2013.2286319" @default.
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