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- W2097187007 abstract "Abstract Copper(I) nitride (Cu 3 N) is deposited by CVD using copper(II) hexafluoroacetylacetonate (Cu(hfac) 2 ), ammonia, and water as precursors. The influences of process parameters on growth rate, phase content, chemical composition and morphology are studied. The introduction of water is found to increase film growth rate on the SiO 2 substrate. Films are deposited in the tem‐perature range 250–550 °C. Single‐phase Cu 3 N is obtained up to 400 °C. A phase mixture of Cu 3 N and Cu is obtained at 425 °C, while a temperature of 550 °C and above yields single‐phase Cu. X‐ray diffraction (XRD) confirms that Cu 3 N has the cubic, anti‐ReO 3 ‐type structure; with a cell parameter in the range 3.805–3.816 Å. X‐ray photoelectron spectroscopy (XPS) verifies the Cu 3 N stoichiometry. The films are free from impurities (below the detection limit of 1%) at a large excess of ammonia. Scanning electron microscopy (SEM) shows facetted grains, with the faces becoming more well‐defined at higher temperatures." @default.
- W2097187007 created "2016-06-24" @default.
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- W2097187007 date "2009-12-01" @default.
- W2097187007 modified "2023-10-11" @default.
- W2097187007 title "CVD of Copper(I) Nitride" @default.
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- W2097187007 doi "https://doi.org/10.1002/cvde.200906794" @default.
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