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• W2097550341 abstract "The performance of a tunnel field effect transistor (TFET) with a raised germanium (Ge) source region is investigated via 2-D device simulation with a tunneling model calibrated to experimental data. The comparison of various Ge-source TFET designs shows that a fully elevated Ge-source design provides for the steepest subthreshold swing and, therefore, the largest on-state drive current for low-voltage operation. Mixed-mode (dc and ac) simulations are used to assess the energy-delay performance. In comparison with a MOSFET, an optimized Ge-source TFET is projected to provide for a lower energy per operation for throughput in the frequency range of up to <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$sim$</tex></formula> 1 GHz for sub-0.5-V operation." @default.
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• W2097550341 date "2010-10-01" @default.
• W2097550341 modified "2023-10-16" @default.
• W2097550341 title "Tunnel Field Effect Transistor With Raised Germanium Source" @default.
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• W2097550341 doi "https://doi.org/10.1109/led.2010.2061214" @default.
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