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• W2097622905 abstract "Gas-phase selective etching of native oxide film formed on a silicon surface is an essential requirement for ULSI process technologies. Ultraclear anhydrous hydrogen fluoride (AHF) gas and a corrosion-free system were developed for this etching process. The reaction mechanism of silicon oxide film with moistureless HF was investigated, and selective etching conditions were developed. The gas-phase selective etching of native oxide in an environment of strictly controlled AHF concentration in N/sub 2/ is described.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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• W2097622905 date "1990-01-01" @default.
• W2097622905 modified "2023-10-09" @default.
• W2097622905 title "Gas-phase selective etching of native oxide" @default.
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• W2097622905 doi "https://doi.org/10.1109/16.43806" @default.
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