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• W2097650452 abstract "Adsorptions of monovalent atoms (noble and alkali metals) of submonolayer coverages (0.1–0.2 ML) on the Si(111)-√3×√3-Ag surface commonly induced similar √21×√21 superstructures, all of which exhibited high electrical conductances. Common processes seem to work among these adsorbates in such phenomena; the valence electrons of the adsorbates are transferred to the substrate surface-state bands (carrier doping). On the contrary, adsorption of C60 molecules on the √3×√3-Ag surface reduced the conductance, presumably because conduction electrons in the surface-state band of the substrate are transferred to the molecules due to their strong electronegativity (acceptor-type adsorbates)." @default.
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• W2097650452 date "2000-08-01" @default.
• W2097650452 modified "2023-10-01" @default.
• W2097650452 title "Surface electronic transport on silicon: donor- and acceptor-type adsorbates on Si(111)-√3×√3-Ag substrate" @default.
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• W2097650452 doi "https://doi.org/10.1016/s0169-4332(00)00168-9" @default.
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