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• W2097745900 abstract "We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10$^{6}$ A/cm$^{2}$. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions." @default.
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• W2097745900 date "2011-12-12" @default.
• W2097745900 modified "2023-10-04" @default.
• W2097745900 title "Room temperature ballistic transport in InSb quantum well nanodevices" @default.
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• W2097745900 doi "https://doi.org/10.1063/1.3668107" @default.
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