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- W2098022764 abstract "The device performance of a pentacene-based organic thin-film transistor (OTFT) fabricated on an aluminum nitride (AlN) surface can be improved by exposing AlN to a methane gas before device fabrication. The mobility of the OTFT was enhanced from 0.046 to by exposing AlN to . Its threshold voltage was reduced from −4.5 to −1.9 V. After the exposure, the reduced surface energy of AlN was correlated with the improvement of the OTFT performance. The reduction of surface energy was correlated with the replacement of bonds by C–O bonds and hydrocarbon on the AlN surface." @default.
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- W2098022764 date "2009-01-01" @default.
- W2098022764 modified "2023-10-18" @default.
- W2098022764 title "Methane Exposure on the Aluminum Nitride Gate Dielectric in Pentacene-Based Organic Thin-Film Transistors" @default.
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- W2098022764 doi "https://doi.org/10.1149/1.3182823" @default.
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