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• W2098423365 endingPage "1999" @default.
• W2098423365 startingPage "1999" @default.
• W2098423365 abstract "The brominated surface layer of SiO 2 was studied after HBr reactive ion etching (RIE) with in-situ X-ray photoelectron spectroscopy (XPS). Bromine was observed, but neither the Si-Si nor the Si-Br x bond was spectrally detected. Most of the bromine on the SiO 2 surface desorbed after atmospheric exposure. Oxygen was depleted by both HBr RIE and rare gas sputtering, and the XPS peak was broadened by sputtering. Carbon addition enhanced the oxygen depletion and the peak broadening. Results indicate that the conventional “chemical sputtering” does not occur in the HBr RIE of SiO 2 , but rather oxygen extraction by ion bombardment or preferential sputtering initiates the etching reaction. After the extraction, bromine reacts with silicon within the same collision cascade, and prevents the Si-O recombination, which is observed as the peak broadening. Carbon enhances the oxygen extraction." @default.
• W2098423365 created "2016-06-24" @default.
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• W2098423365 date "1992-06-01" @default.
• W2098423365 modified "2023-09-23" @default.
• W2098423365 title "Mechanism of High Selectivity and Impurity Effects in HBr RIE: In-Situ Surface Analysis" @default.
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• W2098423365 doi "https://doi.org/10.1143/jjap.31.1999" @default.
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