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- W2098499610 abstract "The current–voltage (I-V) characteristics of ternary SbS 1 − x Se x I crystals grown from the vapor phase with x = 0, 0.2 and 0.5 are measured at various temperatures. A nonlinear behavior of the characteristics was observed at higher bias voltages. The temperature dependent I-V data are explained in the framework of the phonon-assisted tunneling model. From the fit of the experimental data with the theory the density of centers in the metal-semiconductor layer and field strength at which the tunneling occurs are estimated. The results of temperature dependent I-V data measured by Qasrawi and Gasanly for TlGaS 2 (2005 Semicond. Sci. Technol. 20 , 446–452) are reinterpreted on the basis of this model." @default.
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- W2098499610 date "2007-05-25" @default.
- W2098499610 modified "2023-09-27" @default.
- W2098499610 title "Current Mechanism in SbS1 − xSexI Crystals" @default.
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- W2098499610 doi "https://doi.org/10.1080/00150190701369966" @default.
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