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- W2098589177 abstract "The degradation of the electrical performance of 2-MeV electron-irradiated thin gate oxide FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers is reported. The difference of the degradation is examined by analyzing the extracted MOS-transistor parameters. The degradation of the performance is discussed taking into account the front-back gate coupling effect and the floating body effect" @default.
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- W2098589177 date "2006-08-01" @default.
- W2098589177 modified "2023-10-01" @default.
- W2098589177 title "Analysis of 2-MeV Electron-Irradiation Induced Degradation in FD-SOI MOSFETs Fabricated on ELTRAN and UNIBOND Wafers" @default.
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- W2098589177 doi "https://doi.org/10.1109/tns.2006.880925" @default.
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