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- W2098987560 abstract "Reaction kinetics and surface coverage of water oxidation intermediates at a W/Mo-BiVO4 photoanode were studied using surface interrogation scanning electrochemical microscopy (SI-SECM). Adsorbed hydroxyl radicals (OH•) were produced during water oxidation at the semiconductor surface under UV–visible irradiation and were subsequently electrochemically titrated by tip-generated reductant without irradiation. The IrCl62–/3– redox couple was used to determine the surface concentration of OH• in acidic solution. On W/Mo-BiVO4, ∼6% of the absorbed photons generate surface OH• with a coverage of 5.8 mC cm–2. Less than 1% of the irradiated photons were eventually used for water oxidation under high intensity irradiation (∼1 W cm–2) at the photoanode. Assuming that the primary decay mechanism of the adsorbed OH• on W/Mo-BiVO4 is dimerization to produce hydrogen peroxide (H2O2), the rate constant was determined to be 4 × 103 mol–1 m2 s–1. A faster decay rate of OH• was observed in the presence of excess methanol ..." @default.
- W2098987560 created "2016-06-24" @default.
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- W2098987560 date "2013-05-29" @default.
- W2098987560 modified "2023-10-04" @default.
- W2098987560 title "Surface Interrogation Scanning Electrochemical Microscopy (SI-SECM) of Photoelectrochemistry at a W/Mo-BiVO<sub>4</sub> Semiconductor Electrode: Quantification of Hydroxyl Radicals during Water Oxidation" @default.
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- W2098987560 doi "https://doi.org/10.1021/jp400478z" @default.
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