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• W2099091494 abstract "We developed the new control gate (CG) material and structure in order to overcome scaling limitation beyond 20nm NAND flash cell. New CG material can achieve excellent gap-fill without void and improvement of the Gate CD Gap (GCG). And also, by using new CG material, CG depletion between floating gate (FG) can be improved. As a result, gate coupling ratio, bit-line (BL) interference and tail-cell Vt distribution are drastically improved. These technologies play an important role in the characteristic of scaled NAND flash memory cell and reliability." @default.
• W2099091494 created "2016-06-24" @default.
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• W2099091494 date "2012-04-01" @default.
• W2099091494 modified "2023-09-27" @default.
• W2099091494 title "Optimization of control gate material and structure for enhancing 20nm 64Gb NAND flash reliability" @default.
• W2099091494 doi "https://doi.org/10.1109/vlsi-tsa.2012.6210120" @default.
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