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- W2099112199 abstract "The requirements of Si-based photonic devices in the next generation of chip technologies have caused extensive studies on Ge/Si quantum dot devices. In this communication, we report on lateral three-terminal FET type of photodetectors based on Ge dot layers sandwiched between SiGe QWs, where the near-infrared light was mainly absorbed in the Ge island layers. In addition to the source and drain contacts, a gate contact was implemented to control the carrier transfer along the layer stack direction. Very high photo-response was observed with a negative gate bias, accompanied with a significant increase of the carrier lifetime" @default.
- W2099112199 created "2016-06-24" @default.
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- W2099112199 date "2006-01-01" @default.
- W2099112199 modified "2023-09-27" @default.
- W2099112199 title "MBE Growth and Characterization of Three-Terminal Ge(dot)/SiGe(well) Near-Infrared Photodetectors" @default.
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- W2099112199 doi "https://doi.org/10.1109/istdm.2006.246585" @default.
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