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- W2099319370 abstract "Abstract Delta doping of diamond constitutes a very promising route to fabricate novel generation of high power and high frequency electronic devices. However, the achievement of abrupt interfaces between highly boron doped and undoped layers requires the shortest residence times of reactive species in the substrate vicinity. We report here on an innovative gas injection system especially designed to reduce this residence time. This technique was applied to fabricate sharp rising and decaying boron interfaces. According to SIMS profiles, the sharpest profiles were obtained on decaying interfaces exhibiting doping gradients close to 1.5 nm per decade over five decades of boron concentrations, namely from 10 16 to 10 21 atoms/cm 3 . (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2099319370 date "2011-11-11" @default.
- W2099319370 modified "2023-10-09" @default.
- W2099319370 title "Ultra-sharp boron interfaces for delta doped diamond structures" @default.
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- W2099319370 doi "https://doi.org/10.1002/pssr.201105480" @default.
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