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- W2099340981 abstract "In this paper, we examine the Impact Ionization Field-Effect Transistor (I-FET or I-MOS) as well as the Tunnel Field-Effect Transistor (T-FET), paying attention to junction and material design requirements based on device physics considerations. Device performance parameters and electrical characteristics of I-MOS and T-FET devices are dependent on device structure, doping level, doping gradient, and/or material properties. Device design exploiting semiconductor heterojunctions and lattice mismatched materials for strain engineering are also discussed." @default.
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- W2099340981 date "2009-06-01" @default.
- W2099340981 modified "2023-09-25" @default.
- W2099340981 title "Junction technologies for devices with steep subthreshold swing" @default.
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- W2099340981 doi "https://doi.org/10.1109/iwjt.2009.5166207" @default.
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