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- W2099504170 abstract "This paper outlines the SiGe Technology in term of frequency performances, noise performances and power performances. The conclusions indicate that SiGe HBT technology are very promising for RF and microwave circuits featuring low noise behavior. We finally present the works that have been performed in the field of the improvement of the passive elements performances on silicon substrate." @default.
- W2099504170 created "2016-06-24" @default.
- W2099504170 creator A5063742493 @default.
- W2099504170 date "2002-11-07" @default.
- W2099504170 modified "2023-09-24" @default.
- W2099504170 title "SiGe technologies for wireless microwave and millimeter-wave applications" @default.
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- W2099504170 doi "https://doi.org/10.1109/icmel.2000.838723" @default.
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