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- W2099526473 abstract "The static and dynamic current–voltage characteristics of the bulk metal chalcogenide glassy semiconductor Cu10(AsSe1.4I0.2)90 have been measured in the temperature range 303–373 K. They exhibit a transition from an ohmic behaviour in the low-field region to a non-ohmic behaviour in the high-field preswitching region, which is explained in terms of the theory of space charge limited conduction. It has found that this glass exhibits a current-controlled negative resistance switching characteristic with memory. The electrical resistance obeys an Arrhenius-type dependence on the ambient temperature with single activation energy ΔEσ in the considered temperature range. The threshold voltage decreases exponentially with increasing temperature and increases as d1/2 with an increase in the thickness of the investigated samples. The calculated ratio ΔEth/ΔEσ = 0.469 (where ΔEth is the threshold voltage activation energy) is very close to 0.5, obtained theoretically on the basis of electrothermal model. Therefore, the switching phenomenon in the investigated glassy semiconductor can be explained according to a physical model based on the electrothermal breakdown theory." @default.
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- W2099526473 date "2009-07-24" @default.
- W2099526473 modified "2023-10-17" @default.
- W2099526473 title "Electrical switching in the bulk metal chalcogenide glassy semiconductor Cu<sub>10</sub>(AsSe<sub>1.4</sub>I<sub>0.2</sub>)<sub>90</sub>" @default.
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- W2099526473 doi "https://doi.org/10.1088/0268-1242/24/8/085021" @default.
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