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• W2099754586 abstract "Although high-temperature measurements show a dramatic reduction in the bias-temperature stress-induced threshold-voltage instability of present state-of-the-art devices, a more thorough test methodology shows that several different conclusions may actually be drawn. The particular conclusion depends on the specific post-BTS measurement technique employed. Immediate room-temperature measurements suggest that significant oxide-trap activation may still be occurring. A significant, yet rapid, post-BTS recovery is observed as well. These results underline the importance of making both high-temperature and room-temperature measurements, as a function of stress and recovery time, to better ensure that the full effect of the BTS is observed. Initial AC BTS results suggest a similar level of device degradation as occurs from a DC BTS." @default.
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• W2099754586 date "2013-01-01" @default.
• W2099754586 modified "2023-10-01" @default.
• W2099754586 title "A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs" @default.
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• W2099754586 doi "https://doi.org/10.4028/www.scientific.net/msf.740-742.549" @default.
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