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- W2099888508 abstract "In order to reduce short channel effects, a new dual gate SOI MOSFET is proposed. In the proposed structure, a second gate is used with a drain dependent bias to screen the drain voltage and consequently reduce the threshold voltage reduction due to drain induced barrier lowering. Simulations show considerable improvement in short channel effects." @default.
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- W2099888508 date "2009-01-01" @default.
- W2099888508 modified "2023-09-23" @default.
- W2099888508 title "Split Gate SOI MOSFET with Drain Dependent Bias for Short Channel Effects Reduction" @default.
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- W2099888508 doi "https://doi.org/10.1109/icsps.2009.134" @default.
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