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- W2099963574 abstract "A new RTA approach using a single wafer type furnace which provides wafer temperature profiles equivalent to the ones achieved from the conventional lamp-based RTA systems is introduced. The single wafer rapid thermal furnace (SRTF) allows short time annealing in a nearly isothermal furnace environment. In this paper, 11B+ and 49BF2+ shallow and ultra-shallow implanted wafers (1 keVs30 keV) were annealed using the SRTF system to investigate electrical activation efficiency as well as B diffusion during annealing." @default.
- W2099963574 created "2016-06-24" @default.
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- W2099963574 date "2002-01-01" @default.
- W2099963574 modified "2023-09-24" @default.
- W2099963574 title "Ultra-shallow implant anneal using single wafer rapid thermal furnace" @default.
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- W2099963574 doi "https://doi.org/10.1109/iit.2002.1257945" @default.
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