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• W2100027686 abstract "A poly-Si nanowire (NW) thin-film transistor configured with the double-gated scheme was fabricated and characterized. The fabrication process features the clever use of selective plasma etching to form a rectangular NW underneath a hard mask. In this paper, we show that replacing the original ion-implanted poly-Si with <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>in situ</i> doped poly-Si for the source/drain significantly enhances the device performance, including steeper subthreshold swing (SS), larger on/off current ratio, and reduced series resistance. In particular, the SS is improved to a record-breaking low value of 73 mV/dec, which, to the best of our knowledge, is the most ideal ever reported for a poly-Si based device. The new NW transistors with such excellent switching properties are highly promising for reducing power consumption and operational voltage in practical circuit applications." @default.
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• W2100027686 date "2010-07-01" @default.
• W2100027686 modified "2023-10-18" @default.
• W2100027686 title "<i>In Situ</i> Doped Source/Drain for Performance Enhancement of Double-Gated Poly-Si Nanowire Transistors" @default.
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• W2100027686 doi "https://doi.org/10.1109/ted.2010.2049227" @default.
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