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• W2100060209 abstract "20 nm-node planer MONOS NAND Flash memory is developed for the first time. Excellent performances such as fast program speed are realized without using FinFET structure. Furthermore, potential of tight Vth distribution is confirmed using 50 nm-node cells. These properties indicate that planer MONOS cell technology developed in this work can be one of candidates for multi-level NAND Flash memory with 20 nm-node and beyond." @default.
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• W2100060209 date "2006-06-01" @default.
• W2100060209 modified "2023-09-27" @default.
• W2100060209 title "20nm-node planer MONOS cell technology for multi-level NAND Flash Memory" @default.
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