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• W2100076335 abstract "The assembly of ultrathin ZnSe nanowires over large areas (see Figure) is achieved by a Langmuir–Blodgett technique in a single step with uniform registry, and without any further secondary technique for alignment. Ultrahigh packing density of junctions, exceeding over 60 × 103 μm–2, is achieved by subsequent deposition of a second two-dimensional nanowire assembly with a controlled angle between the two layers. The resulting network notably surpasses the limit of conventional fabrication techniques." @default.
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• W2100076335 date "2006-01-19" @default.
• W2100076335 modified "2023-09-26" @default.
• W2100076335 title "A Semiconductor-Nanowire Assembly of Ultrahigh Junction Density by the Langmuir-Blodgett Technique" @default.
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• W2100076335 doi "https://doi.org/10.1002/adma.200501234" @default.
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