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• W2100255950 abstract "A new advantage of an elevated source/drain (S/D) configuration to improve MOSFET characteristics is presented. By adopting pocket implantation into an elevated S/D structure which was formed by Si selective epitaxial growth and gate sidewall removal, we demonstrate that the parasitic junction capacitance as well as the junction leakage was significantly reduced for an NMOSFET while maintaining its good short channel characteristics. These successful results are attributed to the modification of the boron impurity profile in the deep S/D regions. The capacitance reduction rate, furthermore, was more remarkable as the pocket dose was further increased. This means that the present self-aligned pocket implantation is very promising for future MOSFETs with a very short gate length, where high pocket dosage will be required to suppress the short channel effect." @default.
• W2100255950 created "2016-06-24" @default.
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• W2100255950 date "2001-01-01" @default.
• W2100255950 modified "2023-09-24" @default.
• W2100255950 title "Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain NMOSFETs" @default.
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• W2100255950 doi "https://doi.org/10.1109/16.944184" @default.
• W2100255950 hasPublicationYear "2001" @default.
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