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• W2100404461 abstract "physica status solidi (a)Volume 90, Issue 2 p. K151-K156 Short Note Oxygen donor formation and oxygen precipitation in czochralski silicon due to heat treatment at 600 to 800 °c P. Gaworzewski, P. Gaworzewski Zentrum für wissenschaftlichen Gerätebau der Akademie der Wissenschaften der DDR, Institutsteil Berlin-Rahnsdorf Search for more papers by this authorE. Hild, E. Hild Zentrum für wissenschaftlichen Gerätebau der Akademie der Wissenschaften der DDR, Research Institute for Telecommunication, Budapest Search for more papers by this authorK. Schmalz, K. Schmalz Zentrum für wissenschaftlichen Gerätebau der Akademie der Wissenschaften der DDR, Institut für Halbleiterphysik der Akademie der Wissenschaften der DDR, Frankfurt (Oder) Search for more papers by this author P. Gaworzewski, P. Gaworzewski Zentrum für wissenschaftlichen Gerätebau der Akademie der Wissenschaften der DDR, Institutsteil Berlin-Rahnsdorf Search for more papers by this authorE. Hild, E. Hild Zentrum für wissenschaftlichen Gerätebau der Akademie der Wissenschaften der DDR, Research Institute for Telecommunication, Budapest Search for more papers by this authorK. Schmalz, K. Schmalz Zentrum für wissenschaftlichen Gerätebau der Akademie der Wissenschaften der DDR, Institut für Halbleiterphysik der Akademie der Wissenschaften der DDR, Frankfurt (Oder) Search for more papers by this author First published: 16 August 1985 https://doi.org/10.1002/pssa.2210900254Citations: 6 Seestr. 82, DDR-1166 Berlin, GDR. Gabor Aron utca 65,1525 Budapest 15, Hungary. Walter-Korsing-Str. 2, DDR-1200 Frankfurt/Oder, GDR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 K. Tempelhoff, F. Spiegelberg, R. Gleichmann, and D. Wruck, phys. stat. sol. (a) 56, 213 (1979). 2 A. Kanamori and M. Kanamori, J. appl. Phys. 50, 8095 (1979). 3 F. Gaworzewski and K. Schmalz, phys. stat. sol. (a) 58, K223 (1980). 4 A. Bourret, J. Thibault-desseaux, and D. N. Seidman, J. appl. Phys. 55, 825 (1984). 5 F. Gaworzewski, E. Hild, F. -G. Kirscht, and L. Vecsernyés, phys. stat. sol. (a) 85, 133 (1984). 6 V. Cazcarra and P. Zunio, J. appl. Phys. 51, 4206 (1980). 7 M. Tajima, T. Masui, T. Abe, and T. Iizuka, Semiconductor Silicon 1981, Ed. H. R. Huff, R. J. Kriegler, and Y. Takeishi, The Electrochem. Soc. Softbound Symp. Ser., Fennington (N.J.) 1981 (p. 82). 8 F. Gawofyewski and K. Schmalz, phys. stat. sol. (a) 77, 571 (1983). 9 C. L. Clazys, private communication. 10 S. M. Hu, J. Vacuum Sci. Technol. 14, 17 (1977). 11 K. Schmalz and P. Gaworzewski, phys. stat. sol. (a) 78, K141 (1983). Citing Literature Volume90, Issue216 August 1985Pages K151-K156 ReferencesRelatedInformation" @default.
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