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• W2100417195 abstract "We present n-type silicon PERT (passivated emitter and rear totally diffused) solar cells with an Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /SiN <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> -passivated BBr <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> -diffused back-junction emitter. The aluminum front side grid is evaporated in an industrial-type in-line evaporation system. The efficiency of the best 4 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> solar cell is 19.6%, the fill factor is 79%, the open-circuit voltage is 660 mV and the short-circuit current density is 37.6 mA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . We use (700±10) μm-thick silicon shadow masks for the in-line evaporation of the aluminum front grid. The masks are fabricated by a laser process and subsequent anisotropic etching. The resulting finger width of the in-line evaporated fingers is (60±20) μm. The dynamic aluminum deposition rate is 5 μm×m/min for a carrier speed of 0.33 m/min. During in-line evaporation the linear thermal expansion of the mask is limited to (15±5) μm. Our n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> np <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> -solar cell structure uses 2 high temperature diffusion processes: A P diffusion and a subsequent B diffusion. An essential element of our cell process is the order of these diffusions: We redistribute the phosphorus atoms of the front surface field during the subsequent high-temperature boron diffusion on the rear. The resulting phosphorus surface concentration is (7±1)×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>19</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sup> and the corresponding sheet resistance is (80±10) Ω/□. A reference cell with a front grid statically evaporated in a laboratory-type reactor through a metal mask shows an efficiency of 20.4%. We thus confirm the high quality of the passivated boron back-junction emitter and of the efficiency potential of our solar cell structure." @default.
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• W2100417195 date "2011-06-01" @default.
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• W2100417195 title "High-efficiency back-junction silicon solar cell with an in-line evaporated aluminum front grid" @default.
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• W2100417195 doi "https://doi.org/10.1109/pvsc.2011.6186141" @default.
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