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W2100480848 abstract "Functional integration between semiconductors and ferromagnets was demonstrated with the spin-valve transistor. A ferromagnetic multilayer was sandwiched between two device-quality silicon substrates by means of vacuum bonding. The emitter Schottky barrier injected hot electrons into the spin-valve base. The collector Schottky barrier accepts only ballistic electrons, which makes the collector current very sensitive to magnetic fields. Room temperature operation was accomplished by preparing Si-Pt-Co-Cu-Co-Si devices. The vacuum bonding technique allows the realization of many ideas for vertical transport devices and forms a permanent link that is useful in demanding adhesion applications." @default.
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W2100480848 date "1998-07-17" @default.
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W2100480848 title "Room Temperature-Operating Spin-Valve Transistors Formed by Vacuum Bonding" @default.
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W2100480848 doi "https://doi.org/10.1126/science.281.5375.407" @default.
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