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• W2100577123 abstract "The aim of this paper is to establish a well-defined theoretical background in which the kT-layer concept and the empirical expression of the backscattering coefficient introduced by Lundstrom and co-workers to describe the role of scattering in nanoscale devices under high-field conditions and quasi-ballistic transport regime are derived analytically. To this purpose, one-dimensional (1-D) Boltzmann transport equation is solved in the framework of a relaxation length approximation, leading to a set of drift-diffusion like transport equations. This set of equations is then solved in a template 1-D structure (with a linear potential energy profile), leading to an analytical expression for the backscattering coefficient, which is equal, in the limit of low- and high-electric fields, to the formulas proposed by Lundstrom This approach allows us to identify the exact assumptions and qualitative validity limits of these formulas" @default.
• W2100577123 created "2016-06-24" @default.
• W2100577123 creator A5008355061 @default.
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• W2100577123 date "2006-07-01" @default.
• W2100577123 modified "2023-09-23" @default.
• W2100577123 title "On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices" @default.
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• W2100577123 doi "https://doi.org/10.1109/ted.2006.876387" @default.
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