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• W2100580980 abstract "We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell." @default.
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• W2100580980 date "2011-10-31" @default.
• W2100580980 modified "2023-10-04" @default.
• W2100580980 title "High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy" @default.
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• W2100580980 doi "https://doi.org/10.1186/1556-276x-6-576" @default.
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