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• W2100754966 endingPage "1875" @default.
• W2100754966 startingPage "1869" @default.
• W2100754966 abstract "The design, fabrication, and characterization of 0.1 /spl mu/m AlSb/InAs HEMT's are reported. These devices have an In/sub 0.4/Al/sub 0.6/As/AlSb composite barrier above the InAs channel and a p/sup +/ GaSb layer within the AlSb buffer layer. The HEMT's exhibit a transconductance of 600 mS/mm and an f/sub T/ of 120 GHz at V/sub Ds/=0.6 V. An intrinsic f/sub T/ of 160 GHz is obtained after the gate bonding pad capacitance is removed from an equivalent circuit. The present HEMT's have a noise figure of 1 dB with 14 dB associated gain at 4 GHz and V/sub Ds/=0.4 V. Noise equivalent circuit simulation indicates that this noise figure is primarily limited by gate leakage current and that a noise figure of 0.3 dB at 4 GHz is achievable with expected technological improvements. HEMT's with a 0.5 /spl mu/m gate length on the same wafer exhibit a transconductance of 1 S/mm and an intrinsic f/sub T/L/sub g/, product of 50 GHz-/spl mu/m." @default.
• W2100754966 created "2016-06-24" @default.
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• W2100754966 date "1998-01-01" @default.
• W2100754966 modified "2023-09-26" @default.
• W2100754966 title "AlSb/InAs HEMT's for low-voltage, high-speed applications" @default.
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• W2100754966 doi "https://doi.org/10.1109/16.711349" @default.
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