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- W2100767515 abstract "The microwave and dc performance of Schottky barrier InP FET's where an n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-</sup> layer of low carrier concentration is incorporated between the gate metal and the active layer are reported. FET's having gate dimensions of 1 µm × 200 µm and a channel length of 7 µm were fabricated. The observed gate leakage current was about 1 µA at a reverse bias of -12 V. The voltage that can be applied to the drain before breakdown was about +20 V while the gate bias was kept at -5 V. A maximum available gain of 6 dB in a microstrip circuit was measured at 9 GHz." @default.
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- W2100767515 date "1979-03-01" @default.
- W2100767515 modified "2023-10-16" @default.
- W2100767515 title "Effects of an n<sup>-</sup>layer under the gate on the performance of InP MESFET's" @default.
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- W2100767515 doi "https://doi.org/10.1109/t-ed.1979.19414" @default.
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