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- W2100954177 abstract "Even in the area of smart power ICs it becomes more and more vital to detect plasma damaging process steps. Since plasma processes are quite expensive they are optimized respective machine throughput. Of course, this might affect the gate oxide quality. Furthermore, combining power and intelligent control tasks on one chip goes along with thinner gate oxide, which becomes more susceptible to plasma damage. Therefore, to speed up the ramp-up of new technologies it is necessary to detect plasma damage during the technology developement. This task is aggravated by the fact that during developement only a small number of wafers are processed. So it is necessary to have a strategy to detect plasma damage in an efficient way. Our strategy is based on damage sensors and efficient and reliable measurement techniques for evaluating these sensors. Of course, the more sensitive the detecting structures and the measurements, the smaller the number of wafers required." @default.
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- W2100954177 date "1997-01-01" @default.
- W2100954177 modified "2023-09-27" @default.
- W2100954177 title "A Strategy To Detect Charge Damaging Process Steps Within A Multilayer Metallization Technology" @default.
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- W2100954177 doi "https://doi.org/10.1109/ppid.1997.596710" @default.
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