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- W2101203400 abstract "We introduce a mechanism for metal void formation that is due to an interfacial vacancy in the underlying dielectric. These voids will occur during a period of storage in a metal bank. An experiment was conducted to detect metal voids more easily and to evaluate a process-design modification to prevent the formation of these voids. For mask ROM products, this work has helped assure the reliability of metallized wafers stored for long periods of time." @default.
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- W2101203400 date "2002-11-28" @default.
- W2101203400 modified "2023-09-24" @default.
- W2101203400 title "A study of stress voiding effect on AlSi metal bank allowed lifetime for IC foundry fabs" @default.
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- W2101203400 doi "https://doi.org/10.1109/irws.1998.745361" @default.
- W2101203400 hasPublicationYear "2002" @default.
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