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- W2101444610 abstract "A novel normally-off AIN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMT) on 100-mm Si substrates for high-power applications is demonstrated for the first time by means of a selective thermal oxidation of AIN. The formation of a high-quality insulating AION layer resulting from the dry thermal oxidation of AIN at 900 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$^{circ}hbox{C}$</tex></formula> in oxygen has been identified by transmission electron microscopy and X-ray photoelectron spectroscopy. The AIN thermal oxidation appears to be highly selective toward the SiN cap layer allowing the local depletion of the 2-D electron gas (self-aligned to the gate) and thus the achievement of normally-off operation. Threshold voltage ( <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$ hbox{V}_{rm T}$</tex></formula> ) of <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$+$</tex></formula> 0.8 V and drain leakage current at <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{V}_{rm GS}$</tex></formula> = 0 V well below 1 <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$muhbox{A/mm}$</tex></formula> are obtained reproducibly over the wafer. The comparison of the fabricated MOSHEMTs with the control sample (identical but nonoxidized) reveals a drastic shift of <formula formulatype=inline xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink><tex Notation=TeX>$hbox{V}_{rm T}$</tex></formula> toward positive values and three to four orders of magnitude drain leakage current reduction." @default.
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- W2101444610 date "2010-09-01" @default.
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- W2101444610 title "Novel E-Mode GaN-on-Si MOSHEMT Using a Selective Thermal Oxidation" @default.
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