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• W2101732372 abstract "We discuss the photovoltaic effect at a p-n heterojunction, in which the illuminated side is a doped Mott insulator, using the simplest description of a Mott insulator within the Hubbard model. We find that the internal quantum efficiency of such a device, if we choose an appropriate narrow-gap Mott insulator, can be significantly enhanced due to impact ionization caused by the photoexcited ``hot'' electron/hole pairs. Namely, the photoexcited electron and/or hole can convert its excess energy beyond the Mott-Hubbard gap to additional electrical energy by creating multiple electron/hole pairs in a time scale which can be shorter than the time characterizing other relaxation processes." @default.
• W2101732372 created "2016-06-24" @default.
• W2101732372 creator A5078668309 @default.
• W2101732372 date "2010-09-10" @default.
• W2101732372 modified "2023-10-03" @default.
• W2101732372 title "Photovoltaic effect for narrow-gap Mott insulators" @default.
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• W2101732372 doi "https://doi.org/10.1103/physrevb.82.125109" @default.
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