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• W2102063382 abstract "Schottky barrier diodes (SBDs) with multi- buffer were fabricated and investigated. It was found that we can effectively suppress the formation of threading dislocation in the epitaxial layers and thus obtain better crystal quality using the multi- buffer. It was also found that we can achieve a larger effective Schottky barrier height and thus reduce leakage current of the SBDs by using the multi- buffer." @default.
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• W2102063382 date "2008-01-01" @default.
• W2102063382 modified "2023-10-18" @default.
• W2102063382 title "AlGaN∕GaN Schottky Barrier Diodes with Multi-Mg[sub x]N[sub y]∕GaN Buffer" @default.
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• W2102063382 doi "https://doi.org/10.1149/1.2959117" @default.
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